Renesas
H5N5016PL-E0-E - MOSFET
H5N5016PL-E0-E
500V - 50A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°
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H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Pow.
Renesas
H5N5016PL-E0-E Distributor
