HA-5004 Datasheet | Specifications & PDF Download

CRMT5004E1 () 500V 6A 3-phase Integrated Power Modules Description CRMT5004E1 is 3-phase Integrated Power Modules (IPM) designed for advanced appl

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PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25(Min)@IC= -5A ·Wide Area of Safe Operation ·Complement to Type MJ15003 ·

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5004 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·

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Single Phase Silicon Bridge Rectifier Features • High efficiency • Silicon junction • Metal case • Types from 50 V to 400 V VRRM • Not ESD Sensitive M

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Single Phase Silicon Bridge Rectifier Features • High efficiency • Silicon junction • Metal case • Types from 50 V to 400 V VRRM • Not ESD Sensitive M

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Feature ●6.3mm standard pin ●Low forward voltage drop ●Isolation voltage 2500V～ ●UL registered E304417 Single-phase bridge rectifier BR5004 thru BR50

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SN65004 One Channel Direct Drive Speech Controller „ INTRODUCTION SN65004 Series is 4 seconds one-channel single chip voice synthesizer IC which cont

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SEP ELECTRONIC CORP. KBPC50005 thru KBPC5010 50.0 A Single-Phase Silicon Bridge Rectifier Rectifier Reverse Voltage 50 to 1000V Features 16.2 + 0.5

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low

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Semiconductor T UCT ROD ACEMEN 47 P E 7 T L 7 E P 42 OL RE 00-4 m OBS ENDED 8 1 s.co MM ions ECO pplicat p@harri R January 1999 O A l N ap entraail:

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS GBPC50005 THRU GBPC5010 TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIER

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Alfa-MOS Technology General Description AFN5004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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SEMICONDUCTOR KBJ50 RRooHHSS Nell High Power Products Single-Phase Bridge Rectifier, 50A KBJ5004 Thru KBJ5012 20.5 17.5 10.2 7.6 7.6 31 Ø3.3 9.5

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® WON-TOP ELECTRONICS KBPC50S SERIES 50A SINGLE PHASE BRIDGE RECTIFIER Pb Features  Diffused Junction  Low Forward Voltage Drop  High Current Cap

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Suntan® Su® KBPC50005W THRU KBPC5010W SINGLE-PHASE BRIDGE RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 50.0 Ampere FEATU RE S ◆High f

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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