AFN5004S - N-Channel Enhancement Mode MOSFET
AFN5004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN5004S Features
* 40V/20A,RDS(ON)= 5.5mΩ@VGS=10V 40V/15A,RDS(ON)= 6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application LCD Display Backlight Inverters DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking
