AFND1G08U3 Datasheet - ATO

AFND1G08U3 1G-bit NAND FLASH

The AFND1G08U3 is 1G-bit with spare 32Mbit capacity. The device is offered in 3.3V power supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it possible to preserve valid data w.

1G bit (128Mx8Bit)NAND FLASH 1Gb NAND FLASH AFND1G08U3 Rev.06 Nov. 2013 Confidential 1 1G bit (128Mx8Bit)NAND FLASH Revision No. History Draft Date Remark Rev. 00 Initial Draft June. 2012 Preliminary Rev. 01 Add new FBGA PKG dimension option (6.5x8.0mm 48B) Nov. 2012 Rev. 02 Rev. 03 Rev. 04 tRP(/RE Pulse Width) 12ns  15ns - VOH, VIL, VOL values control - Read Operation Figure modification - Write Protect figures added - Corrected TSOP Package Dimension Dec., 2012 Jan., 2013 Ma.

AFND1G08U3 Features

* SUMMARY

* Power Supply -3.3V Device(AFND1G08U3) 2.7V ~ 3.6V

* Organization -Memory Cell Array : (128M + 4M) x 8bits -Data Register : (2048 + 64) x 8bits

* Automatic Program and Erase -Page Program : (2048 + 64) x 8bits -Block Erase : (128K +4K) x 8bit = 64pages

* Pag

AFND1G08U3 Datasheet (885.66 KB)