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AFN1010S, AFN1010S-Alfa Datasheet - Alfa-MOS

AFN1010S N-Channel Enhancement Mode MOSFET

AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications. Pin Description ( TO-220-3L.

AFN1010S Features

* z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply - Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch Pin Define Pin 1 2 3

AFN1010S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN1010S, AFN1010S-Alfa. Please refer to the document for exact specifications by model.
AFN1010S Datasheet Preview Page 2 AFN1010S Datasheet Preview Page 3

Datasheet Details

Part number:

AFN1010S, AFN1010S-Alfa

Manufacturer:

Alfa-MOS

File Size:

387.57 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN1010S, AFN1010S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN1010S AFN1010S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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