AFN1010S Datasheet, Mosfet, Alfa-MOS

AFN1010S Features

• Mosfet z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply - Secondary Syn

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Part number:

AFN1010S

Manufacturer:

Alfa-MOS

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387.57kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN1010S Application

• Applications Pin Description ( TO-220-3L ) Features z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell des

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AFN1010S

Alfa-MOS

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