AFN1012, AFN1012-Alfa Datasheet - Alfa-MOS

AFN1012 N-Channel MOSFET

AFN1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial.

AFN1012 Features

* 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Batter

AFN1012-Alfa-MOS.pdf