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AFN1026S

N-Channel MOSFET

AFN1026S Features

* 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.2A , RDS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV ) Diode design

* in SOT-563 package design Application Drivers: Relays, Solenoids, Lamps

AFN1026S General Description

AFN1026S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFN1026S Datasheet (533.91 KB)

Preview of AFN1026S PDF

Datasheet Details

Part number:

AFN1026S

Manufacturer:

Alfa-MOS

File Size:

533.91 KB

Description:

N-channel mosfet.

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TAGS

AFN1026S N-Channel MOSFET Alfa-MOS

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