AFN1012E Datasheet, Mosfet, Alfa-MOS

AFN1012E Features

• Mosfet 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage

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Part number:

AFN1012E

Manufacturer:

Alfa-MOS

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586.77kb

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📄 Datasheet

Description:

N-channel mosfet. AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN1012E Application

• Applications Pin Description ( SOT-523 ) AFN1012E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=

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AFN1012E

Alfa-MOS

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