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AFN1012E

N-Channel MOSFET

AFN1012E Features

* 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, M

AFN1012E General Description

AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFN1012E Datasheet (586.77 KB)

Preview of AFN1012E PDF

Datasheet Details

Part number:

AFN1012E

Manufacturer:

Alfa-MOS

File Size:

586.77 KB

Description:

N-channel mosfet.

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TAGS

AFN1012E N-Channel MOSFET Alfa-MOS

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