AFN1032E Datasheet, Mosfet, Alfa-MOS

AFN1032E Features

• Mosfet 30V/0.6A,RDS(ON)=500mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V 30V/0.4A,RDS(ON)=880mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage

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Part number:

AFN1032E

Manufacturer:

Alfa-MOS

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564.44kb

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📄 Datasheet

Description:

N-channel mosfet. AFN1032E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN1032E Application

• Applications Pin Description ( SOT-523 ) AFN1032E 30V N-Channel Enhancement Mode MOSFET Features 30V/0.6A,RDS(ON)=500mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=

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AFN1032E

Alfa-MOS

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