AFN1034E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria
AFN1034E Features
* 30V/0.6A,RDS(ON)=450mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-563 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems
Datasheet Details
AFN1034E, AFN1034E-Alfa
Alfa-MOS
579.31 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: AFN1034E, AFN1034E-Alfa.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
