1G-bit Datasheet | Specifications & PDF Download

8XC51GB CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Commercial Express 87C51GB 8 Kbytes OTP 8 Kbytes Internal Program Memory 83C51GB 8 Kbytes Factory Prog

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www.DataSheet.co.kr W9751G6JB 8M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto

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8XC51GB CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Commercial Express 87C51GB 8 Kbytes OTP 8 Kbytes Internal Program Memory 83C51GB 8 Kbytes Factory Prog

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32-bit Arm Cortex-M0+ with 5V Support, CAN-FD, PTC, and Advanced Analog SAM C20/C21 Family Features Operating Conditions • 2.7V – 5.5V – -40°C to +12

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W25N01GVxxIG/IT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ Publication Release Date: May 09, 2018 Revisio

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CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and

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S29GL01GT/S29GL512T 1-Gb (128 MB)/512-Mb (64 MB), GL-T MirrorBit® Eclipse™ Flash General Description The Cypress S29GL01GT/512T are MirrorBit® Eclips

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www.DataSheet.co.kr W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION

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MN103SFJ7/N0/N4 Series, MN103SFN1/N5 Series, MN103SFN2/N6 Series 32-bit Single-chip Microcontroller PubNo. 232N6-014E 1.1 Overview 1.1.1 Overview The

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W971GG8KB 16M  8 BANKS  8 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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FastJack™ 1x1 Tab-Up Gigabit PoE and PoE+ Long Body RJ45 RoHS Compliant Conflict FREE ü Product Features: Gigabit (10/100/1000) Ethernet RJ45 IEEE

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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W35N01JWxxxG/T DATASHEET BRIEF 1.8V 1G-BIT SERIAL SLC NAND FLASH MEMORY OCTAL SPI WITH 166MHZ SDR & 120MHZ DDR BUFFER READ & CONTINUOUS READ This is a

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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Rev 1.4 FS35ND01G-S1Y2QWFI000 SPINAND FS35ND01G-S1Y2 Datasheet M-00137 Rev 1.4 www.longsys.com Page 1 Longsys Electronics Revision History: Rev.

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W971GG6SB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION

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