F59D1G81LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Product Overview

ESMT

Part number	F59D1G81LB-45TG2M
Manufacturer	ESMT
File Size	1.75 MB
Description	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
Datasheet	F59D1G81LB-45TG2M Datasheet
Additional preview pages of the F59D1G81LB-45TG2M datasheet.

Voltage Supply: 1.8V (1.7 V ~ 1.95V).
Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max. ) - Serial Access: 45ns (.

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Other Datasheets by ESMT

F59D1G81LB-45BCG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BCG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BCG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Published: Apr 2, 2019 |