F59D1G81A Datasheet - Elite Semiconductor

F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased in.

F59D1G81A Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G81A-EliteSemiconductor.pdf