F59D1G81A Datasheet, Memory, Elite Semiconductor

F59D1G81A Features

  • Memory
  • Voltage Supply: 1.8V (1.7 V ~ 1.95V)
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M)

PDF File Details

Part number:

F59D1G81A

Manufacturer:

Elite Semiconductor

File Size:

1.17MB

Download:

📄 Datasheet

Description:

1 gbit (128m x 8/ 64m x 16) 1.8v nand flash memory. The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity). The device is offered in 1.8V VCC

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TAGS

F59D1G81A
Gbit
128M
64M
1.8V
NAND
Flash
Memory
Elite Semiconductor

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

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