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F59D1G81MB-45BCG2M

1.8V NAND Flash Memory

F59D1G81MB-45BCG2M Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G81MB-45BCG2M General Description

The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59D1G81MB-45BCG2M Datasheet (2.37 MB)

Preview of F59D1G81MB-45BCG2M PDF

Datasheet Details

Part number:

F59D1G81MB-45BCG2M

Manufacturer:

ESMT

File Size:

2.37 MB

Description:

1.8v nand flash memory.

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F59D1G81MB-45BCG2M 1.8V NAND Flash Memory ESMT

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