F59D1G81MB-45TG2M Datasheet, Memory, ESMT

F59D1G81MB-45TG2M Features

• Memory
• Voltage Supply: 1.8V (1.7 V ~ 1.95V)
• Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M)

PDF File Details

Part number:

F59D1G81MB-45TG2M

Manufacturer:

ESMT

File Size:

2.37MB

Download:

📄 Datasheet

Description:

1.8v nand flash memory. The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the mos

TAGS

F59D1G81MB-45TG2M

ESMT

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