F59L1G81A
Elite Semiconductor
1.00MB
1 gbit (128m x 8) 3.3v nand flash memory. Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides th
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F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .
F59L1G81LB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
F59L1G81LB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
F59L1G81LB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
F59L1G81LB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto.
F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .
F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
z Voltage Supply: 3.3V (2.7V~3.6V) z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.
F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .
F59L1G81MA-25BIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
z Voltage Supply: 3.3V (2.7V~3.6V) z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.
F59L1G81MA-25TG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .