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F59L1G81A

1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81A Features

* z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial

F59L1G81A General Description

Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 200us on the 2,112-byte page and an erase opera.

F59L1G81A Datasheet (1.00 MB)

Preview of F59L1G81A PDF

Datasheet Details

Part number:

F59L1G81A

Manufacturer:

Elite Semiconductor

File Size:

1.00 MB

Description:

1 gbit (128m x 8) 3.3v nand flash memory.

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F59L1G81A Gbit 128M 3.3V NAND Flash Memory Elite Semiconductor

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