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F59L1G81MA-25BCIG2Y, F59L1G81MA 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81MA-25BCIG2Y Description

ESMT Flash .

F59L1G81MA-25BCIG2Y Features

* z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Seri

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This datasheet PDF includes multiple part numbers: F59L1G81MA-25BCIG2Y, F59L1G81MA. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
F59L1G81MA-25BCIG2Y, F59L1G81MA
Manufacturer
ESMT
File Size
1.17 MB
Datasheet
F59L1G81MA-EliteSemiconductor.pdf
Description
1 Gbit (128M x 8) 3.3V NAND Flash Memory
Note
This datasheet PDF includes multiple part numbers: F59L1G81MA-25BCIG2Y, F59L1G81MA.
Please refer to the document for exact specifications by model.

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Gbit 128M 3.3V NAND Flash Memory ESMT
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