F59L512M81A Datasheet - Elite Semiconductor

F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory

The device is a 64Mx8bit with spare 2Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve vali.

F59L512M81A Features

* Voltage Supply: 2.7V ~ 3.6V

* Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

* Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Ma

F59L512M81A Datasheet (1.12 MB)