F59L512M81A Datasheet, Memory, Elite Semiconductor

F59L512M81A Features

  • Memory
  • Voltage Supply: 2.7V ~ 3.6V
  • Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit
  • Automatic Program and Erase - Page Progra

PDF File Details

Part number:

F59L512M81A

Manufacturer:

Elite Semiconductor

File Size:

1.12MB

Download:

📄 Datasheet

Description:

512mbit (64m x 8) 3.3v nand flash memory. The device is a 64Mx8bit with spare 2Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most

Datasheet Preview: F59L512M81A 📥 Download PDF (1.12MB)
Page 2 of F59L512M81A Page 3 of F59L512M81A

TAGS

F59L512M81A
512Mbit
64M
3.3V
NAND
Flash
Memory
Elite Semiconductor

📁 Related Datasheet

F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic.

F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81LB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81LB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81LB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81LB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts