F59L1G81LB Datasheet - ESMT

1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81LB Features

* Voltage Supply: 3.3V (2.7V~3.6V)

* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

* Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25

F59L1G81LB General Description

The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59L1G81LB Datasheet (2.25 MB)

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Datasheet Details

Part number:

F59L1G81LB

Manufacturer:

ESMT

File Size:

2.25 MB

Description:

1 gbit (128m x 8) 3.3v nand flash memory.

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F59L1G81LB Gbit 128M 3.3V NAND Flash Memory ESMT

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F59L1G81LB Features

F59L1G81LB General Description

Datasheet Details

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