F59D2G81A Datasheet (Elite Semiconductor) - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

F59D2G81A, 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity).

The device is offered in 1.8V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased in

F59D2G81A Features

* Voltage Supply: 1.8V (1.7V ~ 1.95V)

* Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Era