F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

Elite Semiconductor

Datasheet Details

Part number	F59D2G81A
Manufacturer	Elite Semiconductor
File Size	1.54 MB
Description	2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
Datasheet	F59D2G81A-EliteSemiconductor.pdf

The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity).

Voltage Supply: 1.8V (1.7V ~ 1.95V).
Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit.
Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte x16: - Page Program: (1K + 32) word - Block Erase: (64K + 2K) word.
Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (.

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Published: Feb 16, 2016 |