F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

Elite Semiconductor

Description

ESMT Flash .
The device is a 256Mx8bit with spare 8Mx8bit capacity (or 128Mx16bit with spare 4Mx16bit capacity).

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Datasheet Specifications

Part number: F59D2G81A
Manufacturer: Elite Semiconductor
File Size: 1.54 MB
Datasheet: F59D2G81A-EliteSemiconductor.pdf
Description: 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory

Features

* Voltage Supply: 1.8V (1.7V ~ 1.95V)
* Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit
* Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Era

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F59D2G81A Gbit 256M 128M 1.8V NAND Flash Memory Elite Semiconductor

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