F59D4G161A
Elite Semiconductor
1.54MB
4 gbit (512m x 8 / 256m x 16) 1.8v nand flash memory. The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity). The device is offered in 1.8V VC
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F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit.
F59D4G81CA-45BG2L - 4 Gbit (512M x 8) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
Mo.
F59D4G81KA - 4-Gbit 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V)
Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Bloc.
F59D4G81XB - 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Open NAND Flash Interface (ONFI) 1.0-pliant Single-level cell (SLC) technology Org.
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MB - 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.