Datasheet4U Logo Datasheet4U.com

F59D4G161A, F59D4G81A Datasheet - Elite Semiconductor

F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased i.

F59D4G161A Features

* Voltage Supply: 1.8V (1.7V ~ 1.95V)

* Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D4G81A-EliteSemiconductor.pdf

This datasheet PDF includes multiple part numbers: F59D4G161A, F59D4G81A. Please refer to the document for exact specifications by model.
F59D4G161A Datasheet Preview Page 2 F59D4G161A Datasheet Preview Page 3

Datasheet Details

Part number:

F59D4G161A, F59D4G81A

Manufacturer:

Elite Semiconductor

File Size:

1.54 MB

Description:

4 gbit (512m x 8 / 256m x 16) 1.8v nand flash memory.

Note:

This datasheet PDF includes multiple part numbers: F59D4G161A, F59D4G81A.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D4G81CA-45BG2L 4 Gbit (512M x 8) 1.8V NAND Flash Memory (ESMT)

F59D4G81KA 4-Gbit 1.8V NAND Flash Memory (ESMT)

F59D4G81XB 1.8V NAND Flash Memory (ESMT)

F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

TAGS

F59D4G161A F59D4G81A Gbit 512M 256M 1.8V NAND Flash Memory Elite Semiconductor

F59D4G161A Distributor