The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity).
The device is offered in 1.8V VCC Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased i
F59D4G161A Features
* Voltage Supply: 1.8V (1.7V ~ 1.95V)
* Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit
* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era
F59D4G81A-EliteSemiconductor.pdf
Datasheet Details
F59D4G161A, F59D4G81A
Elite Semiconductor
1.54 MB
4 gbit (512m x 8 / 256m x 16) 1.8v nand flash memory.
This datasheet PDF includes multiple part numbers: F59D4G161A, F59D4G81A.
Please refer to the document for exact specifications by model.
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