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F59D1G161MB

1.8V NAND Flash Memory

F59D1G161MB Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G161MB General Description

The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59D1G161MB Datasheet (2.37 MB)

Preview of F59D1G161MB PDF

Datasheet Details

Part number:

F59D1G161MB

Manufacturer:

ESMT

File Size:

2.37 MB

Description:

1.8v nand flash memory.

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F59D1G161MB 1.8V NAND Flash Memory ESMT

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