F59D1G161MB-45TG2M - 1.8V NAND Flash Memory
The Device is a 128Mx8bit with spare 4Mx8bit capacity.
The device is offered in 1.8V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve val
F59D1G161MB-45TG2M Features
* Voltage Supply: 1.8V (1.7 V ~ 1.95V)
* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit
* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era
