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F59D1G161MB-45TG2M, F59D1G81MB-45TG2M Datasheet - ESMT

F59D1G161MB-45TG2M 1.8V NAND Flash Memory

The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59D1G161MB-45TG2M Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G81MB-45TG2M-ESMT.pdf

This datasheet PDF includes multiple part numbers: F59D1G161MB-45TG2M, F59D1G81MB-45TG2M. Please refer to the document for exact specifications by model.
F59D1G161MB-45TG2M Datasheet Preview Page 2 F59D1G161MB-45TG2M Datasheet Preview Page 3

Datasheet Details

Part number:

F59D1G161MB-45TG2M, F59D1G81MB-45TG2M

Manufacturer:

ESMT

File Size:

2.37 MB

Description:

1.8v nand flash memory.

Note:

This datasheet PDF includes multiple part numbers: F59D1G161MB-45TG2M, F59D1G81MB-45TG2M.
Please refer to the document for exact specifications by model.

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TAGS

F59D1G161MB-45TG2M F59D1G81MB-45TG2M 1.8V NAND Flash Memory ESMT

F59D1G161MB-45TG2M Distributor