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F59D4G81A Datasheet - Elite Semiconductor

4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

F59D4G81A Features

* Voltage Supply: 1.8V (1.7V ~ 1.95V)

* Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D4G81A General Description

The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased i.

F59D4G81A Datasheet (1.54 MB)

Preview of F59D4G81A PDF

Datasheet Details

Part number:

F59D4G81A

Manufacturer:

Elite Semiconductor

File Size:

1.54 MB

Description:

4 gbit (512m x 8 / 256m x 16) 1.8v nand flash memory.

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TAGS

F59D4G81A Gbit 512M 256M 1.8V NAND Flash Memory Elite Semiconductor

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