F59D4G81XB Datasheet - ESMT

F59D4G81XB 1.8V NAND Flash Memory

NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE.

F59D4G81XB Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Open NAND Flash Interface (ONFI) 1.0-compliant

* Single-level cell (SLC) technology

* Organization

* Page size: 4352 bytes (4096 + 256 bytes)

* Block size: 64 pages

* Number of planes: 1

* Device size: 4Gb

F59D4G81XB-ESMT.pdf

F59D4G81XB Datasheet Preview — Preview of F59D4G81XB PDF

Datasheet Details

Part number:

F59D4G81XB

Manufacturer:

ESMT

File Size:

2.44 MB

Description:

1.8v nand flash memory.

📁 Related Datasheet

F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D4G81CA-45BG2L 4 Gbit (512M x 8) 1.8V NAND Flash Memory (ESMT)

F59D4G81KA 4-Gbit 1.8V NAND Flash Memory (ESMT)

F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

TAGS

F59D4G81XB F59D4G81XB 1.8V NAND Flash Memory ESMT

F59D4G81XB Distributor