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F59L2G81A Datasheet - Elite Semiconductor

F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory

The device is a 256Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve va.

F59L2G81A Features

* Voltage Supply: 3.3V (2.7V ~ 3.6V)

* Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte

* Page Read Operation - Page Size: (2K + 64) bytes - Random Read

F59L2G81A Datasheet (1.56 MB)