F59L2G81A

2 Gbit (256M x 8) 3.3V NAND Flash Memory

Elite Semiconductor

F59L2G81A Features

* Voltage Supply: 3.3V (2.7V ~ 3.6V)

* Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte

* Page Read Operation - Page Size: (2K + 64) bytes - Random Read

F59L2G81A General Description

The device is a 256Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve va.

F59L2G81A Datasheet (1.56 MB)

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Part number:

F59L2G81A

Manufacturer:

Elite Semiconductor

File Size:

1.56 MB

Description:

2 gbit (256m x 8) 3.3v nand flash memory.

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F59L2G81A Gbit 256M 3.3V NAND Flash Memory Elite Semiconductor

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F59L2G81A Features

F59L2G81A General Description

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