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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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1 H27U1G8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash 1 Gb NAND Flash H27U1G8F2B This document is a general product description and is subject to ch

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ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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ESMT Flash FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8

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S34MS01G2 S34MS02G2 S34MS04G2 1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded Distinctive Characteristics  Density – 1 Gb / 2 Gb / 4 Gb  Architect

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TC58BVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HTA00 is a

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ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic

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TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a sing

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TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5T2HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G  8 BIT) CMOS NAND E PROM (Tr

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TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5D2FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G × 8 BIT) CMOS NAND E PROM (Mu

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TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3HTA00 is a

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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ESMT Flash (Preliminary) F50D2G41LB (2M) 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Co

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