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F59L1G81LA Datasheet

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

F59L1G81LA datasheet preview

Datasheet Details

Part number	F59L1G81LA
Datasheet	F59L1G81LA-ESMT.pdf
File Size	1.02 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81LA Overview

ESMT.

F59L1G81LA Key Features

Memory Cell Array: (128M + 4M) x 8bit
Data Register: (2K + 64) x 8bit Automatic Program and Erase
Page Program: (2K + 64) Byte
Block Erase: (128K + 4K) Byte Page Read Operation
Page Size: (2K + 64) Byte
Random Read: 25us (Max.)
Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time
Program time: 400us
typical
Block Erase time: 3ms

F59L1G81A from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	F59L1G81A	1 Gbit (128M x 8) 3.3V NAND Flash Memory	Elite Semiconductor

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

See all ESMT (Elite Semiconductor Microelectronics Technology) datasheets

Part Number	Description
F59L1G81LB	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BCG2M	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BG2M	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25TG2M	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCG2Y	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCIG2Y	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BG2Y	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BIG2Y	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25TG2Y	1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25TIG2Y	1 Gbit (128M x 8) 3.3V NAND Flash Memory

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