F59L1G81LA Datasheet, memory equivalent, ESMT

F59L1G81LA Features and benefits

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F59L1G81LB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81LB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81LB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81LB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic.

F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25TG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .