Datasheet4U Logo Datasheet4U.com

F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Datasheet Summary

Features

  • Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us - typical 950us - max. - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardw.

📥 Download Datasheet

Datasheet preview – F59L1G81LA

Datasheet Details

Part number F59L1G81LA
Manufacturer ESMT
File Size 1.02 MB
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet download datasheet F59L1G81LA Datasheet
Additional preview pages of the F59L1G81LA datasheet.

📁 Similar Datasheet

  • F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
Other Datasheets by ESMT

Full PDF Text Transcription

Click to expand full text
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us - typical 950us - max. - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81LA (2Y) 1 Gbit (128M x 8) 3.
Published: |