TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM .
The TC58NVG0S3E is a single 3.

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Datasheet Specifications

Part number: TC58NVG0S3ETA00
Manufacturer: Toshiba ↗
File Size: 538.28 KB
Datasheet: TC58NVG0S3ETA00_Toshiba.pdf
Description: 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size
* x8 2112 × 64K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode contr

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📌 All Tags

GBIT 128M BIT CMOS NAND E2PROM Toshiba

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