TC58NVG0S3ETA00 Datasheet - Toshiba

TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between th.

TC58NVG0S3ETA00 Features

* Organization Memory cell array Register Page size Block size

* x8 2112 × 64K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode contr

TC58NVG0S3ETA00_Toshiba.pdf