TC58NVG0S3ETA00

1 GBIT (128M X 8 BIT) CMOS NAND E2PROM

Toshiba

TC58NVG0S3ETA00 Features

* Organization Memory cell array Register Page size Block size

* x8 2112 × 64K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode contr

TC58NVG0S3ETA00 General Description

The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between th.

TC58NVG0S3ETA00 Datasheet (538.28 KB)