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TC58NS256DC

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM

TC58NS256DC Features

* Organization Memory cell array 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and D

TC58NS256DC General Description

2 TM ) The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the.

TC58NS256DC Datasheet (709.64 KB)

Preview of TC58NS256DC PDF

Datasheet Details

Part number:

TC58NS256DC

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

709.64 KB

Description:

Tentative toshiba mos digital integrated circuit silicon gate cmos 256-mbit cmos nand e2prom.
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M × 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia DESCRIPT.

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TAGS

TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM Toshiba Semiconductor

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