Datasheet4U Logo Datasheet4U.com

TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM

📥 Download Datasheet  Datasheet Preview Page 1

Description

TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M × 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia DESCRIPT.
2 TM ) The TC58NS256 is a single 3.

📥 Download Datasheet

Preview of TC58NS256DC PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
TC58NS256DC
Manufacturer
Toshiba ↗ Semiconductor
File Size
709.64 KB
Datasheet
TC58NS256DC_ToshibaSemiconductor.pdf
Description
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM

Features

* Organization Memory cell array 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and D

Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which m

TC58NS256DC Distributors

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor TC58NS256DC-like datasheet