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TC58NVG0S3AFT00

1 GBit CMOS NAND EPROM

TC58NVG0S3AFT00 Features

* x Organization Memory cell allay 2112 u 64K u 8 Register 2112 u 8 Page size 2112bytes Block size (128K  4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply VCC 2.7 V to 3.6 V x Program/Erase Cycles 1E5 Cycles(

TC58NVG0S3AFT00 General Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the .

TC58NVG0S3AFT00 Datasheet (441.26 KB)

Preview of TC58NVG0S3AFT00 PDF

Datasheet Details

Part number:

TC58NVG0S3AFT00

Manufacturer:

Toshiba ↗

File Size:

441.26 KB

Description:

1 gbit cmos nand eprom.
www.DataSheet4U.com TC58NVG0S3AFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1GBIT (128M u 8BITS) CMOS NAND E PROM DESCR.

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TAGS

TC58NVG0S3AFT00 GBit CMOS NAND EPROM Toshiba

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