TC58NVG0S3AFT05 Datasheet, Eprom, Toshiba

TC58NVG0S3AFT05 Features

• Eprom
• Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status

PDF File Details

Part number:

TC58NVG0S3AFT05

Manufacturer:

Toshiba ↗

File Size:

629.01kb

Download:

📄 Datasheet

Description:

1 gbit cmos nand eprom. The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPR

TC58NVG0S3AFT05 Application

• Applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non

TAGS

TC58NVG0S3AFT05

Toshiba

📁 Related Datasheet

TC58NVG0S3AFT00 - 1 GBit CMOS NAND EPROM (Toshiba)
.. TC58NVG0S3AFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1GBIT (128M u 8BITS) CMOS NAND E PROM DESCR.

TC58NVG0S3ETA00 - 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a sing.

TC58NVG0S3HBAI4 - 1G BIT (128M x 8-BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M  8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HBAI4 is .

TC58NVG0S3HBAI6 - 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)
.

TC58NVG0S3HTA00 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTA00 is a .

TC58NVG0S3HTAI0 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTAI0 is a .

TC58NVG1S3BFT00 - 2-GBit CMOS NAND EPROM (Toshiba)
w m INTEGRATED CIRCUIT SILICON GATE CMOS o TENTATIVE TOSHIBA MOS DIGITAL .c U × 16 BIT) CMOS NAND E2PROM 2 GBIT (256M × 8 BIT/128M 4 t DESCRIPTION e .

TC58NVG1S3EBAI4 - 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3E is a sing.

TC58NVG1S3ETA00 - 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a sing.

TC58NVG1S3ETAI0 - 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM (Toshiba)
TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3E is a sing.