TC58NVG0S3AFT05 - 1 GBit CMOS NAND EPROM

Toshiba

TC58NVG0S3AFT05 Datasheet Preview — Preview of TC58NVG0S3AFT05 PDF

Datasheet Details

Part number	TC58NVG0S3AFT05
Manufacturer	Toshiba ↗
File Size	629.01 KB
Description	1 GBit CMOS NAND EPROM
Datasheet	TC58NVG0S3AFT05_Toshiba.pdf

TC58NVG0S3AFT05 Product details

Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks.

Features

Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control.
Powersupply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles (With ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ. Erase (.

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Published: Jul 6, 2005 |