Datasheet4U Logo Datasheet4U.com

TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM

TC58NVG0S3AFT05 Description

www.DataSheet4U.com TC58NVG0S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM DESCR.
The TC58NVG0S3A is a single 3.

TC58NVG0S3AFT05 Features

* Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control
* Powersupply VCC = 2.7 V to 3.6

📥 Download Datasheet

Preview of TC58NVG0S3AFT05 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TC58NS256DC - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC58128FT - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
  • TC58128FTI - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
  • TC5816BDC - 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
  • TC5816BFT - 16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
  • TC58256AFT - 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
  • TC58256DC - CMOS NAND EPROM (Toshiba Semiconductor)

📌 All Tags

GBit CMOS NAND EPROM Toshiba
Toshiba TC58NVG0S3AFT05-like datasheet