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TC58NVG0S3AFT05 Datasheet - Toshiba

1 GBit CMOS NAND EPROM

TC58NVG0S3AFT05 Features

* Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control

* Powersupply VCC = 2.7 V to 3.6

TC58NVG0S3AFT05 General Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between th.

TC58NVG0S3AFT05 Datasheet (629.01 KB)

Preview of TC58NVG0S3AFT05 PDF

Datasheet Details

Part number:

TC58NVG0S3AFT05

Manufacturer:

Toshiba ↗

File Size:

629.01 KB

Description:

1 gbit cmos nand eprom.
www.DataSheet4U.com TC58NVG0S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM DESCR.

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TAGS

TC58NVG0S3AFT05 GBit CMOS NAND EPROM Toshiba

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