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S70FL01GS 1 Gbit (128 Mbyte) FL-S Flash SPI Multi-I/O, 3.0 V Features • CMOS 3.0 V Core • Serial peripheral interface (SPI) with Multi-I/O - SPI clo

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1Gbit NAND FLASH FMND1GXXX3D 3V/1.8V, x8/x16 1G-BIT NAND FLASH Rev.09 (Sep. 8. 2016) 1 Documents title 1Gbit (128Mx8Bit, 64Mx16Bit) NAND FLASH Revis

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1Gbit SPI NAND Flash F35SQA001G Datasheet FORESEE® 1Gbit SPI NAND Flash ConfidFe3nD5taSitaQalsAh0Leo0en1tgGs ys Co n fi d en t i a LM-00002

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Rev. 1.5 FS704B2R1CH6A2KDE\FS704B2R1CH6A2KAM 4Gbits NAND Flash(512M x8-Bit) +2Gbits LPDDR2(8M x8-Bank x32-bit) nMCP Datasheet FS704B2R1CH6A2KDE FS704

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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Rev. 1.5 FS704B2R1CH6A2KDE\FS704B2R1CH6A2KAM 4Gbits NAND Flash(512M x8-Bit) +2Gbits LPDDR2(8M x8-Bank x32-bit) nMCP Datasheet FS704B2R1CH6A2KDE FS704

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HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product descri

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1 H27U1G8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash 1 Gb NAND Flash H27U1G8F2B This document is a general product description and is subject to ch

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR

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GD9Fx1G8F2D GD9Fx1G8F2D DATASHEET 1G-bit 2K+128BPage Size 1 GD9Fx1G8F2D Contents 1. FEATURES

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GD9Fx1G8F2D GD9Fx1G8F2D DATASHEET 1G-bit 2K+128BPage Size 1 GD9Fx1G8F2D Contents 1. FEATURES

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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GD9Fx1G8F2D GD9Fx1G8F2D DATASHEET 1G-bit 2K+128BPage Size 1 GD9Fx1G8F2D Contents 1. FEATURES

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GD9Fx1G8F2D GD9Fx1G8F2D DATASHEET 1G-bit 2K+128BPage Size 1 GD9Fx1G8F2D Contents 1. FEATURES

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GD9Fx1G8F2D GD9Fx1G8F2D DATASHEET 1G-bit 2K+128BPage Size 1 GD9Fx1G8F2D Contents 1. FEATURES

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GD9Fx1G8F2D GD9Fx1G8F2D DATASHEET 1G-bit 2K+128BPage Size 1 GD9Fx1G8F2D Contents 1. FEATURES

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TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6D2GTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G  8 BIT) CMOS NAND E PROM (Mu

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TC58NVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTA00 is a

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ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic

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