Datasheet4U Logo Datasheet4U.com

TC58NVG0S3HBAI4

1G BIT (128M x 8-BIT) CMOS NAND E2PROM

TC58NVG0S3HBAI4 Features

* Organization Memory cell array Register Page size Block size

* x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 bloc

TC58NVG0S3HBAI4 General Description

The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between t.

TC58NVG0S3HBAI4 Datasheet (671.57 KB)

Preview of TC58NVG0S3HBAI4 PDF

Datasheet Details

Part number:

TC58NVG0S3HBAI4

Manufacturer:

Toshiba ↗

File Size:

671.57 KB

Description:

1g bit (128m x 8-bit) cmos nand e2prom.

📁 Related Datasheet

TC58NVG0S3HBAI6 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58NVG0S3HTA00 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58NVG0S3HTAI0 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM (Toshiba)

TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM (Toshiba)

TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58NVG1S3BFT00 2-GBit CMOS NAND EPROM (Toshiba)

TC58NVG1S3EBAI4 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM (Toshiba)

TC58NVG1S3ETA00 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TC58NVG1S3ETAI0 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM (Toshiba)

TAGS

TC58NVG0S3HBAI4 BIT 128M 8-BIT CMOS NAND E2PROM Toshiba

Image Gallery

TC58NVG0S3HBAI4 Datasheet Preview Page 2 TC58NVG0S3HBAI4 Datasheet Preview Page 3

TC58NVG0S3HBAI4 Distributor