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TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM

Datasheet Summary

Description

The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks.

Features

  • Organization Memory cell allay 528 × 32K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control.
  • Power supply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ.

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Datasheet Details

Part number TC581282AXB
Manufacturer Toshiba Semiconductor
File Size 554.62 KB
Description 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
Datasheet download datasheet TC581282AXB Datasheet
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www.DataSheet4U.com TC581282AXB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TENTATIVE 128-MBIT (16M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages). The TC581282A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
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