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TC58BVG0S3HBAI6 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM

TC58BVG0S3HBAI6 Description

TC58BVG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM .
The TC58BVG0S3HBAI6 is a single 3.

TC58BVG0S3HBAI6 Features

* Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read
* Mode control Serial input/output Command contro

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1G-BIT 128M BIT CMOS NAND E2PROM Toshiba
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