TC58BVG0S3HBAI4 Datasheet, E2prom, Toshiba

✔ TC58BVG0S3HBAI4 Features

Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes
Modes Read, Reset, Auto Page Program, Au

✔ TC58BVG0S3HBAI4 Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems whi

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TC58BVG0S3HBAI4

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📄 Datasheet

Description:

1 gbit (128m x 8 bit) cmos nand e2prom. The TC58BVG0S3HBAI4 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E

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IC FLASH 1GBIT PARALLEL 63TFBGA

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TC58BVG0S3HBAI4

188 In Stock

Qty : 5040 units

Unit Price : $1.94

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TC58BVG0S3HBAI4 GBIT 128M BIT CMOS NAND E2PROM Toshiba