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TC58BVG1S3HBAI4

2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

TC58BVG1S3HBAI4 Features

* Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BVG1S3HBAI4 General Description

The TC58BVG1S3HBAI4 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between .

TC58BVG1S3HBAI4 Datasheet (668.64 KB)

Preview of TC58BVG1S3HBAI4 PDF

Datasheet Details

Part number:

TC58BVG1S3HBAI4

Manufacturer:

Toshiba ↗

File Size:

668.64 KB

Description:

2 gbit (256m x 8 bit) cmos nand e2prom.

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TAGS

TC58BVG1S3HBAI4 GBIT 256M BIT CMOS NAND E2PROM Toshiba

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