TC58BVG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58BVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM .
The TC58BVG1S3HBAI4 is a single 3.

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Datasheet Specifications

Part number: TC58BVG1S3HBAI4
Manufacturer: Toshiba ↗
File Size: 668.64 KB
Datasheet: TC58BVG1S3HBAI4-Toshiba.pdf
Description: 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

Features

* Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BVG1S3HBAI4 Distributors

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TC58BVG1S3HBAI4 GBIT 256M BIT CMOS NAND E2PROM Toshiba

Toshiba TC58BVG1S3HBAI4-like datasheet