TC58BVG1S3HBAI6 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58BVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM .
The TC58BVG1S3HBAI6 is a single 3.

📥 Download Datasheet

TC58BVG1S3HBAI6 Datasheet Preview — Preview of TC58BVG1S3HBAI6 PDF

Datasheet Specifications

Part number: TC58BVG1S3HBAI6
Manufacturer: Toshiba ↗
File Size: 688.98 KB
Datasheet: TC58BVG1S3HBAI6-Toshiba.pdf
Description: 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

Features

* Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

TC58BVG1S3HBAI6 Distributors

📁 Related Datasheet

TC581282AXB TC58128FT TC58128FTI TC5816BDC TC5816BFT TC58256AFT

📌 All Tags

TC58BVG1S3HBAI6 2G-BIT 256M BIT CMOS NAND E2PROM Toshiba

Toshiba TC58BVG1S3HBAI6-like datasheet