TC58BVG1S3HBAI6 - 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

Name: TC58BVG1S3HBAI6
SKU: TC58BVG1S3HBAI6-1096667

Toshiba

📥 Download Datasheet

TC58BVG1S3HBAI6 Datasheet Preview — Preview of TC58BVG1S3HBAI6 PDF

Datasheet Details

Part number	TC58BVG1S3HBAI6
Manufacturer	Toshiba
File Size	688.98 KB
Description	2G-BIT (256M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58BVG1S3HBAI6-Toshiba.pdf

TC58BVG1S3HBAI6 Product details

Description

The TC58BVG1S3HBAI6 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Features

Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 2008 blocks Max 2048 blocks.
Power supply VCC = 2.7V to 3.6V.
Access time Cell arr.

📁 TC58BVG1S3HBAI6 Similar Datasheet

TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
TC58128FT - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
TC58128FTI - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
TC5816BDC - 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
TC5816BFT - 16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
TC58256AFT - 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
TC58256DC - CMOS NAND EPROM (Toshiba Semiconductor)
TC5832DC - 32 MBIT (4M x 8BIT) CMOS NAND E2PROM (Toshiba Semiconductor)

Other Datasheets by Toshiba

TC58BVG1S3HBAI4 - 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58BVG1S3HTA00 - 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58BVG1S3HTAI0 - 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HBAI4 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HBAI6 - 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HTA00 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Published: Feb 16, 2017 |