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TC58BVG1S3HBAI6 Datasheet - Toshiba

TC58BVG1S3HBAI6-Toshiba.pdf

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Datasheet Details

Part number:

TC58BVG1S3HBAI6

Manufacturer:

Toshiba ↗

File Size:

688.98 KB

Description:

2g-bit (256m x 8 bit) cmos nand e2prom.

TC58BVG1S3HBAI6, 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM

The TC58BVG1S3HBAI6 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

The device has a 2112-byte static register which allows program and read data to be transferred between

TC58BVG1S3HBAI6 Features

* Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

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