TC58BVG0S3HTAI0 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM

Toshiba

Description

TC58BVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM .
The TC58BVG0S3HTAI0 is a single 3.

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Datasheet Specifications

Part number: TC58BVG0S3HTAI0
Manufacturer: Toshiba ↗
File Size: 303.76 KB
Datasheet: TC58BVG0S3HTAI0-Toshiba.pdf
Description: 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM

Features

* Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read
* Mode control Serial input/output Command contro

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TC58BVG0S3HTAI0 GBIT 128M 8-BIT CMOS NAND E2PROM Toshiba

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