TC58256AFTI Datasheet, Eprom, Toshiba

✔ TC58256AFTI Features

Organization Memory cell allay 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, St

✔ TC58256AFTI Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems whi

PDF File Details

Toshiba manufacturer logo

Part number:

TC58256AFTI

Manufacturer:

Toshiba ↗

File Size:

409.54kb

Download:

📄 Datasheet

Description:

Cmos nand eprom. The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM)

📥 Download PDF (409.54kb)

📁 Related Datasheet

TC58256AFT - 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
.. .. .

TC582562AXB - CMOS NAND EPROM (Toshiba)
TC582562AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC582562A i.

TC58256DC - CMOS NAND EPROM (Toshiba Semiconductor)
.. .. .

TC58256FT - CMOS NAND EPROM (Toshiba)
.. .. .

TC58256FTI - CMOS NAND EPROM (Toshiba)
.. .. .

TC58257AF - (TC58257AP/AF) Erasable and Programmable ROM (Toshiba)
.. .. .

TC58257AP - (TC58257AP/AF) Erasable and Programmable ROM (Toshiba)
.. .. .

TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
.. TC581282AXB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TENTATIVE 128-MBIT (16M × 8 BITS) CMOS NAND E PROM DESCR.

TC58128FT - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
.. .. .. .. .. .. .. .

TC58128FTI - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
.. .. .. .. .. .. .. .

TAGS

TC58256AFTI CMOS NAND EPROM Toshiba