128-MBIT Datasheet | Specifications & PDF Download

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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S25FL127S 128 Mbit (16 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Prelimina

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1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories Data Sheet F

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M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPER

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M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 55ns LOW POWER CONSUMPTION: – Active

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September 2006 HYB25D512[40/80/16]0B[C/T](L) HYB25D512[40/80/16]0B[E/F](L) 512-Mbit Double-Data-Rate SDRAM DDR SDRAM Internet Data Sheet Rev. 1.63 HY

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Document Title 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History Rev

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HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM www.DataSheet4U.com 128-MBit Synchronous DRAM • High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 1

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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MOSEL VITELIC V54C3128(16/80/40)4V(T/S) 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 PRELIMINARY 6 System Frequency (fCK

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September 2006 HYB25D512[40/80/16]0B[C/T](L) HYB25D512[40/80/16]0B[E/F](L) 512-Mbit Double-Data-Rate SDRAM DDR SDRAM Internet Data Sheet Rev. 1.63 HY

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS F

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M48T128Y 5.0 V, 1 Mbit (128 Kb x 8) TIMEKEEPER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, real-time clock,

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M68Z128W 3V, 1 Mbit (128Kb x8) Low Power SRAM with Output Enable s s LOW VOLTAGE: 3.0V (+0.6V / –0.3V) 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE EQ

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