128-MBIT Datasheet | Specifications & PDF Download

Data Sheet, Rev. 1.06, Jan. 2003 HYB25D128400AT(L)-[6/7/8] HYB25D128800AT(L)-[6/7/8] HYB25D128160AT(L)-[6/7/8] 128 Mbit Double Data Rate SDRAM DDR SDR

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HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM www.DataSheet4U.com 128-MBit Synchronous DRAM • High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 1

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0

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Data Sheet, V1.7, July 2003 HYB25D128323C[-3/-3.3] HYB25D128323C[-3.6/L3.6] HYB25D128323C[-4.5/L4.5] HYB25D128323C-5 128 Mbit DDR SGRAM Memory Product

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D a t a S h e e t , Rev. 1.0, A p r . 2 0 0 4 HYB25D128[400/800/160]C[C/E/T](L) 128 Mbit Double Data Rate SDRAM Memory Products Never stop thinking.

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D a t a S h e e t , Rev. 1.0, A p r . 2 0 0 4 HYB25D128[400/800/160]C[C/E/T](L) 128 Mbit Double Data Rate SDRAM Memory Products Never stop thinking.

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FM28V202A 2-Mbit (128 K × 16) F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features ■ 2-Mbit ferroelectric random access memory (F-RAM) logically or

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M28010 1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s s Fast Access Time: 100 ns Single Supply Voltage: – 4.5 V t

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M27C1001 1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM Features ■ 5v ± 10% Supply Voltage in Read Operation ■ Access Time: 35ns ■ Low Power Consump

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D a t a S h e e t , Rev. 1.0, A p r . 2 0 0 4 HYB25D128[400/800/160]C[C/E/T](L) 128 Mbit Double Data Rate SDRAM Memory Products Never stop thinking.

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K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to c

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HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM www.DataSheet4U.com 128-MBit Synchronous DRAM • High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 1

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HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM www.DataSheet4U.com 128-MBit Synchronous DRAM • High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 1

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www.DataSheet4U.com M69KB128AA 128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V

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M28010 1 Mbit (128K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s Fast Access Time: 100 ns s Single Supply Voltage: – 4.5 V t

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0

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CY7C1351G 4-Mbit (128K × 36) Flow-Through SRAM with NoBL™ Architecture 4-Mbit (128K × 36) Flow-Through SRAM with NoBL™ Architecture Features ■ Can su

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www.DataSheet4U.com D a t a S h e e t , Rev. 1.0, Jul. 2005 HYB25DC128800C[E/F] HYB25DC128160C[E/F] 128-Mbit Double-Data-Rate SDRAM DataSheet4U.com

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www.DataSheet4U.com D a t a S h e e t , Rev. 1.0, Jul. 2005 HYB25DC128800C[E/F] HYB25DC128160C[E/F] 128-Mbit Double-Data-Rate SDRAM DataSheet4U.com

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Data Sheet, V1.7, July 2003 HYB25D128323C[-3/-3.3] HYB25D128323C[-3.6/L3.6] HYB25D128323C[-4.5/L4.5] HYB25D128323C-5 128 Mbit DDR SGRAM Memory Product

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