TC58NS128BDC

128 MBit CMOS NAND EPROM

Toshiba

TC58NS128BDC Features

* Organization Memory cell array 528 × 32K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and D

TC58NS128BDC General Description

2 TM ) The TC58NS128B is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte static register which allows program and read data to be transferred between th.

TC58NS128BDC Datasheet (407.42 KB)