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TC58NS512DC - 512 MBit CMOS NAND EPROM

TC58NS512DC Description

TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPT.
2 TM ) The TC58NS512 is a single 3.

TC58NS512DC Features

* Organization Memory cell array 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and

TC58NS512DC Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which m

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512 MBit CMOS NAND EPROM Toshiba
Toshiba TC58NS512DC-like datasheet