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TC58NS512ADC - 512 MBit CMOS NAND EPROM

TC58NS512ADC Description

TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT (64M × 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DE.
) The TC58NS512A is a single 3.

TC58NS512ADC Features

* Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and

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512 MBit CMOS NAND EPROM Toshiba
Toshiba TC58NS512ADC-like datasheet