TC58NS100DC
TC58NS100DC is 1 GBit CMOS NAND EPROM manufactured by Toshiba.
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 TM
1-GBIT (128M × 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia DESCRIPTION
)
The TC58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages). The TC58NS100 is a serial-type memory device which utilizes the I/O pins for both...
