TC58NS512DC
TC58NS512DC is 512 MBit CMOS NAND EPROM manufactured by Toshiba.
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION
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The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages). The TC58NS512 is a serial-type memory device which utilizes the I/O pins for...
