• Part: TC58NVG0S3HBAI4
  • Description: 1G BIT (128M x 8-BIT) CMOS NAND E2PROM
  • Manufacturer: Toshiba
  • Size: 671.57 KB
TC58NVG0S3HBAI4 Datasheet (PDF) Download
Toshiba
TC58NVG0S3HBAI4

Overview

  • Organization Memory cell array Register Page size Block size *
  • x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC  2.7V to 3.6V Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF) Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 300 s/page typ. 2.5 ms/block typ. 30 mA max. 30 mA max 30 mA max 50 A max (Weight: 0.15 g typ.) * * * * * *
  • Package P-TFBGA63-0911-0.80CZ 8 bit ECC for each 512Byte is required. 1