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TC58NVG0S3HBAI4

TC58NVG0S3HBAI4 is 1G BIT (128M x 8-BIT) CMOS NAND E2PROM manufactured by Toshiba.
TC58NVG0S3HBAI4 datasheet preview

TC58NVG0S3HBAI4 Datasheet

Part number TC58NVG0S3HBAI4
Datasheet TC58NVG0S3HBAI4 Datasheet PDF (Download)
File Size 671.57 KB
Manufacturer Toshiba
Description 1G BIT (128M x 8-BIT) CMOS NAND E2PROM
TC58NVG0S3HBAI4 page 2 TC58NVG0S3HBAI4 page 3

TC58NVG0S3HBAI4 Overview

The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: The TC58NVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG0S3HBAI4 Key Features

  • Organization Memory cell array Register Page size Block size
  • Package P-TFBGA63-0911-0.80CZ

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