TC58NVG0S3HTAI0
Overview
The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
- Organization Memory cell array Register Page size Block size x8 2176 64K 8 2176 8 2176 bytes (128K 8K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
- Mode control Serial input/output Command control
- Number of valid blocks Min 1004 blocks Max 1024 blocks
- Power supply VCC 2.7V to 3.6V
- Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time Auto Page Program Auto Block Erase 300 s/page typ. 2.5 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 A max
- Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
- 8 bit ECC for each 512Byte is required.
