TC58NVG0S3HBAI6
Overview
The TC58NVG0S3HBAI6 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
- Organization Memory cell array Register Page size Block size x8 2176 × 64K × 8 2176 × 8 2176 bytes (128K + 8K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
- Mode control Serial input/output Command control
- Number of valid blocks Min 1004 blocks Max 1024 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register Read Cycle Time
- Program/Erase time Auto Page Program Auto Block Erase 25 µs max 25 ns min (CL=50pF) 300 µs/page typ. 2.5 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max 30 mA max 30 mA max 50 µA max
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
- 8 bit ECC for each 512Byte is required. © 2012-2018 Toshiba Memory Corporation 1
