TC58NVG0S3HBAI6 Datasheet | Toshiba

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HBAI6 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages). The TC58NVG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data...